STTH6102TV Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

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STTH6102TV
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
2 x 30 A
200 V
150 °C
V_F (typ)
t_rr (typ)
0.70 V
25 ns
FEATURES AND BENEFITS
■ Suited for welding and high power equipment
■ Very low forward losses
■ Low recovery times
■ High surge current capability
■ Insulated:
Insulating voltage = 2500 V_RMS
Capacitance < 45 pF
■ Low leakage current
DESCRIPTION
Dual center tap rectifier suited for welding
equipment and high power industrial application.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
A1
K1
A2
K2
K1
A1
K2
A2
ISOTOP
STTH6102TV1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
200
V
I_F(RMS) RMS forward current
Per diode
80
A
I_F(AV) Average forward current δ =0.5
Tc = 115°C
Per diode
30
A
I_FSM Surge non repetitive forward current tp = 10 ms Sinusoidal per diode 400
A
T_stg Storage temperature range
- 55 + 150 °C
Tj Maximum operating junction temperature
150
°C
February 2004 - Ed: 1
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