STTH60R04 Datasheet, PDF (1/7 Pages) STMicroelectronics – Ultrafast recovery diode

STTH60R04
Ultrafast recovery diode
Main product characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_{rr (typ)}
60 A
400 V
175° C
0.95 V
31 ns
A
K
Features and benefits
■ Very low switching losses
■ High frequency and/or high pulsed current
operation
■ High junction temperature
A
K
DO-247
STTH60R04W
Description
The STTH60R04 series uses ST's new 400 V
planar Pt doping technology. The STTH60R04 is
specially suited for switching mode base drive and
transistor circuits.
Available in a through-the-hole package, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Order codes
Part Number
STTH60R04W
Marking
STTH60R04W
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value Unit
V_RRM
V_RSM
I_F(RMS)
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
t_p = 5 µs F = 1 kHz square
Surge non repetitive forward current t_p = 10 ms Sinusoidal
Storage temperature range
Operating junction temperature range
400
V
400
V
100
A
T_c = 110° C
60
A
375
A
650
A
-65 to +175 ° C
-40 to +175 ° C
March 2007
Rev 1
1/7
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