STTH506TTI Datasheet, PDF (1/5 Pages) STMicroelectronics – Tandem 600V HYPERFAST RECTIFIER

®
STTH506TTI
Tandem 600V HYPERFAST RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
5A
V_RRM
600 V (in series)
Tj (max)
150 °C
V_F (max)
2.6 V
I_RM (typ.)
3.6 A
FEATURES AND BENEFITS
■ ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
■ DESIGNED FOR HIGH dI_F/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
■ INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
■ INSULATION
(2500V_RMS)
ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
■ MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT NEED FOR
VOLTAGE BALANCE NETWORK
■ Package Capacitance: C=7pF
1
2
3
123
Insulated TO-220AB
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI_F/dt.
ABSOLUTE RATINGS (limiting values, for both diodes)
Symbol
V_RRM
I_F(RMS)
I_FSM
T_stg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
600
14
60
-65 +150
+ 150
Unit
V
A
A
°C
°C
TM: TURBOSWITCH is a trademark of STMicroelectronics
June 2003 - Ed: 1A
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