STTH30R04 Datasheet, PDF (1/10 Pages) STMicroelectronics – Low reverse current

STTH30R04
Ultrafast recovery diode
Main product characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_rr
30 A
400 V
175° C
0.97 V
24 ns
Features and benefits
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching and conduction losses
■ High junction temperature
■ Insulated package: DOP3I
– Electrical insulation = 2500 V_RMS
Package capacitance = 12 pF
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
A
K
A
K
TO-220AC
STTH30R04D
K
K
A
K
DO-247
STTH30R04W
AA
A
A
D²PAK
STTH30R04G
A
K
DOP3I
STTH30R04PI
Note: D²PAK - 2 anode terminals must be shorted on
board.
Order codes
Part Number
STTH30R04D
STTH30R04G
STTH30R04G-TR
STTH30R04W
STTH30R04PI
Marking
STTH30R04D
STTH30R04G
STTH30R04G
STTH30R04W
STTH30R04PI
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
400
V
I_F(RMS) RMS forward current
50
A
I_F(AV) Average forward current, δ = 0.5
TO-220AC / DO-247 / D²PAK T_c = 120° C
DOP3I
T_c = 90° C
30
A
I_FRM Repetitive peak forward current
t_p = 10 µs, F = 1 kHz
500
A
I_FSM Surge non repetitive forward current t_p = 10 ms Sinusoidal
300
A
T_stg Storage temperature range
-65 to +175 ° C
T_j Maximum operating junction temperature range
-40 to +175 ° C
March 2007
Rev 1
1/10
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