STTH3006DPI Datasheet, PDF (1/5 Pages) STMicroelectronics – Tandem 600V HYPERFAST BOOST DIODE

®
STTH3006DPI
Tandem 600V HYPERFAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
30 A
V_RRM
600 V
Tj (max)
150 °C
V_F (max)
2.4 V
I_RM (typ.)
6.7 A
t_rr (typ.)
25 ns
FEATURES AND BENEFITS
s ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
s DESIGNED FOR HIGH dI_F/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
s INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
s INSULATION
(2500V_RMS)
ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
s STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
s PACKAGE CAPACITANCE: C=16pF
1
2
2
1
DOP3I
(insulated)
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI_F/dt.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
V_{RRM Repetitive peak reverse voltage}
600
V
I_{F(RMS) RMS forward current}
32
A
I_{FSM Surge non repetitive forward current tp = 10 ms sinusoidal}
180
A
Ipeak _{Peak current waveform}
δ = 0.15 Tc = 120°C
50
A
T_{stg Storage temperature range}
-65 +150
°C
Tj _{Maximum operating junction temperature}
+ 150
°C
October 2003 - Ed: 2A
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