STTH2R06 Datasheet, PDF (1/9 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

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STTH2R06
HIGH EFFICIENCY ULTRAFAST DIODE
Table 1: Main Product Characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_rr (typ)
2A
600 V
175°C
1V
35 ns
FEATURES AND BENEFITS
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
A
K
DO-41
STTH2R06
SMA
STTH2R06A
DESCRIPTION
The STTH2R06 is using ST Turbo 2 600V planar
Pt doping technology. It is specially suited for
switching mode base drive & transistor circuits.
Packaged in axial, SMA, SMB and SMC, this de-
vice is intended for use in high frequency inverters,
free wheeling and polarity protection.
SMB
STTH2R06U
Table 2: Order Codes
Part Number
STTH2R06
STTH2R06RL
STTH2R06A
STTH2R06U
STTH2R06S
SMC
STTH2R06S
Marking
STTH2R06
STTH2R06
R6A
R6U
R62
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward voltage
DO-41
I_F(AV)
Average forward current
δ = 0.5
SMA
SMB
SMC
I_FSM
T_stg
T_j
DO-41
Surge non repetitive forward current
SMA / SMB / SMC
Storage temperature range
Operating junction temperature range
Value
600
7
T_L = 70°C
T_L = 85°C
2
T_L = 100°C
T_L = 115°C
t_p = 10ms
40
sinusoidal
30
-65 to + 175
-40 to + 175
Unit
V
A
A
A
°C
°C
June 2005
REV. 2
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