STTH2L06 Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

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STTH2L06
HIGH EFFICIENCY ULTRAFAST DIODE
Table 1: Main Product Characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_rr (typ)
2A
600 V
175°C
0.85 V
60 ns
FEATURES AND BENEFITS
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
A
K
DO-41
STTH2L06
DESCRIPTION
The STTH2L06 is using ST Turbo 2 600V planar
Pt doping technology. It is specially suited for
SMPS and base drive transistor circuits.
Packaged in axial, SMA and SMB, this device is
intended for use in high frequency inverters, free
wheeling and polarity protection.
SMA
STTH2L06A
SMB
STTH2L06U
Table 2: Order Codes
Part Number
STTH2L06
STTH2L06RL
Marking
STTH2L06
STTH2L06
Part Number
STTH2L06A
STTH2L06U
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward voltage
I_F(AV) Average forward current
δ = 0.5
DO-41
SMA
SMB
I_FSM Surge non repetitive forward current DO-41
SMA / SMB
T_stg Storage temperature range
T_j Maximum operating junction temperature
Tl = 90°C
Tl = 100°C
Tl = 115°C
tp = 10ms
sinusoidal
Marking
L6A
L6U
Value
Unit
600
V
7
A
2
A
2
2
45
A
35
-65 to + 175 °C
175
°C
September 2004
REV. 1
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