STTH2003CT Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH FREQUENCY SECONDARY RECTIFIER

®
STTH2003CT/CG/CF/CR/CFP
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
K
A1
I_F(AV)
2 x 10 A
K
V_RRM
Tj (max)
V_F (max)
trr (max)
300 V
175 °C
1V
35 ns
A2
A2
D²PA^AK¹
STTH2003CG
FEATURES AND BENEFITS
s COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
s ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
s INSULATED PACKAGES: ISOWATT220AB,
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
DESCRIPTION
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB, I²PAK or D²PAK, this device is
especially intended for secondary rectification.
A2
K
A1
TO-220AB
STTH2003CT
A2
K
I²PAK ^A1
STTH2003CR
A2
K
A1
TO-220FPAB
STTH2003CFP
A2
K
A1
ISOWATT220AB
STTH2003CF
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
V_{RRM Repetitive peak reverse voltage}
300
V
I_{F(RMS) RMS forward current}
30
A
I_{F(AV) Average forward TO-220AB / D}²_{PAK /} Tc=140°C Per diode
10
A
current δ = 0.5 I²PAK
Per device
20
ISOWATT220AB
Tc=125°C
TO-220FPAB
Tc=115°C
I_{FSM Surge non repetitive forward current}
tp = 10 ms sinusoidal
110
A
I_{RSM Non repetitive avalanche current}
tp = 20 µs square
5
A
T_{stg Storage temperature range}
-65 + 175 °C
Tj _{Maximum operating junction temperature}
175
°C
August 2003 - Ed: 7D
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