STTH2002C Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

®
STTH2002C
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (typ)
t_rr (typ)
Up to 2 x 15A
200 V
175 °C
0.78 V
22 ns
FEATURES AND BENEFITS
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery times
■ Low leakage current
■ High junction temperature
■ Insulated package: TO-220FPAB
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D²PAK, TO-220FPAB
and I²PAK, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS)
I_F(AV)
RMS forward current
Average forward TO-220AB / I²PAK /
current δ =0.5 D²PAK
TO-220FPAB
I_FSM Surge non repetitive forward current
T_stg Storage temperature range
Tj Maximum operating junction temperature
A1
K
A2
A2
K
A1
TO-220AB
STTH2002CT
I²PAK
A2
K
A1
STTH2002CR
K
A2
K
A1
TO-220FPAB
STTH2002CFP
K _A2
D²PA^AK¹
STTH2002CG
Value Unit
200
V
30
A
Tc = 150°C Per diode
10
A
Tc = 140°C Per device 20
Tc = 130°C Per diode
15
Tc = 115°C Per device 30
Tc = 120°C Per diode
10
Tc = 95°C Per device 20
tp = 10 ms Sinusoidal
90
A
- 65 + 175 °C
175
°C
February 2004 - Ed: 1
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