STTH1R02_07 Datasheet, PDF (1/10 Pages) STMicroelectronics – Ultrafast recovery diode

STTH1R02
Ultrafast recovery diode
Main product characteristics
I_F(AV)
V_RRM
T_j (max)
V_F (typ)
t_rr (typ)
1.5 A
200 V
175° C
0.7 V
15 ns
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH1R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-41, DO-15, SMA, and SMB, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
A
K
A
K
DO-41
STTH1R02
A
K
DO-15
STTH1R02Q
A
A
K
SMA
STTH1R02A
K
SMB
STTH1R02U
Order codes
Part Number
STTH1R02
STTH1R02RL
STTH1R02A
STTH1R02Q
STTH1R02QRL
STTH1R02U
Marking
STTH1R02
STTH1R02
R1A
STTH1R02Q
STTH1R02Q
1R2S
March 2007
Rev 3
www.st.com
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