STTH1R02 Datasheet, PDF (1/8 Pages) STMicroelectronics – Ultrafast recovery diode

Main product characteristics
I_F(AV)
V_RRM
T_j (max)
V_F (typ)
t_rr (typ)
1.5 A
200 V
175 °C
0.7 V
15 ns
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH1R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-41 and SMA, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection.
STTH1R02
Ultrafast recovery diode
A
K
A
K
DO-41
STTH1R02
A
K
SMA
STTH1R02A
Order codes
Part Number
STTH1R02
STTH1R02RL
STTH1R02A
Marking
STTH1R02
STTH1R02
R1A
May 2006
Rev 1
1/8
www.st.com