STTH152 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

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STTH152
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
trr(max)
1.5 A
200 V
175 °C
0.75 V
32 ns
FEATURES AND BENEFITS
s Very low conduction losses
s Negligible switching losses
s Low forward and reverse recovery times
s High junction temperature
DO-15
STTH152
DESCRIPTION
The STTH152 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
Symbol
V_RRM
I_F(AV)
I_FSM
T_stg
Tj
Parameter
Repetitive peak reverse voltage
Average forward current
TI = 115°C δ = 0.5
Surge non repetitive forward current
tp=10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
200
1.5
80
-65 +175
175
THERMAL RESISTANCES
Symbol
R_{th (j-a) Junction to ambient*}
* On infinite heatsink with 10mm lead length.
Parameter
Value
45
Unit
V
A
A
°C
°C
Unit
°C/W
November 2001 - Ed:1A
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