STTH1506TPI Datasheet, PDF (1/5 Pages) STMicroelectronics – Tandem 600V Hyperfast Rectifer

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STTH1506TPI
Tandem 600V Hyperfast Rectifer
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
15 A
V_RRM
600 V (in series)
Tj (max)
150 °C
V_F (max)
2.6 V
I_RM (typ.)
4.8 A
FEATURES AND BENEFITS
s Especially suited as boost diode in continuous
mode power factor correctors and hard
switching conditions.
s Designed for high di/dt operation. Hyperfast
recovery current to compete with GaAs devices.
Allows downsizing of mosfet and heatsinks.
s Internal ceramic insulated devices with equal
thermal conditions for both 300V diodes.
s Insulation (2500V RMS) allows placement on
same heatsink as mosfet and flexible
heatsinking on common or separate heatsink.
s Matched diodes for typical PFC application
without need for voltage balance network.
s C = 7pF
1
2
3
1
2
3
TOP3I
(insulated)
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI_F/dt.
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol
Parameter
Value
Unit
V_{RRM Repetitive peak reverse voltage}
600
V
I_{F(RMS) RMS forward current}
26
A
I_{FSM Surge non repetitive forward current}
tp = 10 ms sinusoidal
130
A
T_{stg Storage temperature range}
-65 +150
°C
Tj
Maximum operating junction temperature
+ 150
°C
TM: TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 1A
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