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STTH12T06 Datasheet, PDF (1/9 Pages) STMicroelectronics – 600 V tandem extra fast diode | |||
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STTH12T06DI
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
trr (typ)
IRM (typ)
VF (typ)
IFRM
Tj (max)
12 A
600 V
15 ns
2.3 A
2.05 V
65 A
175 °C
STTH12T06
600 V tandem extra fast diode
Datasheet â production data
Features
⢠High voltage rectifier
⢠Tandem diodes in series
⢠Very low switching losses
⢠Insulated device with internal ceramic
⢠Equal thermal conditions for both 300 V diodes
⢠Static and dynamic equilibrium of internal
diodes are warranted by design
⢠Insulated package:
â Capacitance: 7 pF
â Insulated voltage: 2500 V rms
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized QRR (6.5 nC) that makes
it perfect for use in circuits working in hard-
switching mode. In particular the VF/QRR trade-off
positions this device between standard ultrafast
diodes and silicon-carbide Schottky rectifiers in
terms of price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
May 2013
This is information on a product in full production.
Doc ID024431 Rev1
1/9
www.st.com
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