STTH12S06 Datasheet, PDF (1/6 Pages) STMicroelectronics – Turbo 2 ultrafast high voltage rectifier

STTH12S06
Turbo 2 ultrafast high voltage rectifier
Table 1. Main product characteristics
I_F(AV)
V_RRM
I_{RM (typ.)}
T_{j (max)}
V_{F (typ)}
t_{rr (typ)}
12 A
600 V
6A
175 °C
1.5 V
14 ns
Features and benefits
■ Ultrafast recovery
■ Low reverse recovery current
■ Reduces losses in diode and switching
transistor
■ Low thermal resistance
■ Higher frequency operation
■ Insulated voltage: 1500 V_RMS
A
K
TO-220FPAC
STTH12S06FP
Description
ST's STTH12S06 is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the STTH12S06,
reduces significantly the switching power losses
of the MOSFET, and thus increases the
efficiency of the application. This allows designers
to reduce the size of their heatsinks.
This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.
Table 2. Absolute ratings (limiting values at 125 °C, unless otherwise stated)
Symbol
Parameter
Value
Unit
V_RRM
I_F(AV)
I_FSM
T_stg
T_j
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
600
V
12
A
t_p = 10 ms sinusoidal
100
A
- 65 + 175
°C
175
°C
October 2007
Rev 1
1/6
www.st.com
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