STTH12012TV Datasheet, PDF (1/8 Pages) STMicroelectronics – Ultrafast recovery - 1200 V diode

STTH12012TV
Ultrafast recovery - 1200 V diode
Main product characteristics
I_F(AV)
V_RRM
T_j
V_F (typ)
t_rr (typ)
2 x 60 A
1200 V
150° C
1.30 V
50 ns
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated package:
Electrical insulation = 2500 V_RMS
Capacitance = 45 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
K2
A2
A2
K1
K1
A1
STTH12012TV
A1
K1
K2
A1
STTH12012TV2
A1
K2
A2
K2
K1
A2
ISOTOP
Order codes
Part Number
STTH12012TV1
STTH12012TV2
Marking
STTH12012TV1
STTH12012TV2
March 2006
Rev 1
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