STTH12002TV Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

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STTH12002TV
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
2 x 60 A
200 V
150 °C
V_F (typ)
t_rr (typ)
0.73 V
35 ns
FEATURES AND BENEFITS
■ Suited for welding and high power equipment
■ Very low forward losses
■ Low recovery times
■ High surge current capability
■ Insulated:
Insulating voltage = 2500 V_RMS
Capacitance < 45 pF
■ Low leakage current
DESCRIPTION
Dual center tap rectifier suited for welding
equipment and high power industrial application.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
A1
K1
A2
K2
K1
A1
K2
A2
ISOTOP
STTH12002TV1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
200
V
I_F(RMS) RMS forward current
Per diode
100
A
I_F(AV) Average forward current δ =0.5
Tc = 105°C
Per diode
60
A
I_FSM Surge non repetitive forward current tp = 10 ms Sinusoidal per diode 700
A
T_stg Storage temperature range
- 55 + 150 °C
Tj Maximum operating junction temperature
150
°C
February 2004 - Ed: 1
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