STTH102 Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

STTH102
High efficiency ultrafast diode
Main product characteristics
I_F(AV)
V_RRM
T_j (max)
V_F(max)
t_rr (max)
1A
200 V
175° C
0.78 V
20 ns
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
A
K
SMA
(JEDEC DO-214AC)
STTH102A
Description
The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
Order codes
Part Number
STTH102A
STTH102
STTH102RL
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Repetitive peak reverse voltage
Average forward current
SMA
DO-41
Surge non repetitive forward
current
SMA
DO-41
T_L = 148° C δ = 0.5
T_L = 130° C δ = 0.5
tp = 10 ms Sinusoidal
T_stg
T_j
dV/dt
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
A
K
DO-41
STTH102
Marking
U12
STTH102
STTH102
Value
Unit
200
V
1
A
40
50
-65 to + 175
175
10000
A
°C
°C
V/µs
November 2006
Rev 5
1/7
www.st.com
7