STTA812D Datasheet, PDF (1/10 Pages) STMicroelectronics – TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

®
STTA812D/DI/G
TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
V_RRM
t_rr (typ)
VF (max)
8A
1200V
50ns
2.0V
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY
INSULATED PACKAGE : TO-220AC Ins.
Electrical insulation : 2500VRMS
Capacitance : 7pF.
K
A
K
TO-220AC
STTA812D
K
A
K
TO-220AC Ins.
STTA812DI
A
NC
D²PAK
STTA812G
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all ”freewheel
mode” operations.
ABSOLUTE RATINGS (limiting values)
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
Symbol
VRRM
VRSM
IF(RMS)
I_FRM
IFSM
Tstg
T_j
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
TO-220AC/ D²PAK
TO-220AC Ins.
Repetitive peak forward current
tp = 5 µs F = 5kHz square
Surge non repetitive forward current tp = 10ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
1200
1200
30
20
110
70
- 65 to + 150
150
Unit
V
V
A
A
A
A
°C
°C
TURBOSWITCH is a trademark of STMicroelectronics.
November 1999 - Ed: 4C
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