STTA512 Datasheet, PDF (1/10 Pages) STMicroelectronics – TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

®
STTA512D/F/B/FP
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
t_rr (typ)
V_F (max)
5A
1200V
45ns
2.0V
FEATURES AND BENEFITS
n SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING,
DEMAGNETIZATION AND RECTIFICATION
n ULTRA-FAST, SOFT RECOVERY.
n VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
n HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
n HIGH REVERSE VOLTAGE CAPABILITY
n INSULATED PACKAGES:
ISOWATT220AC, TO-220FPAC
n Electrical insulation : 2000V DC
Capacitance : 12pF.
K
A
K
TO-220AC
STTA512D
A
K
ISOWATT220AC
STTA512F
K
A
NC
DPAK
STTA512B
A
K
TO-220FPAC
STTA512FP
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all “freewheel
mode” operations.
ABSOLUTE RATINGS (limiting values)
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
Symbol
Parameter
Value
Unit
V_RRM Repetitive peak reverse voltage
1200
V
V_RSM Non repetitive peak reverse voltage
1200
V
I_F(RMS) RMS forward current
TO-220AC / DPAK
20
A
ISOWATT220AC /
TO-220FPAC
10
A
I_FRM Repetitive peak forward current
tp = 5 µs F = 5kHz square
70
A
I_FSM Surge non repetitive forward current tp = 10ms sinusoidal
45
A
T_stg Storage temperature range
- 65 to + 150 °C
T_j
Maximum operating junction temperature
150
°C
TURBOSWITCH is a trademark of STMicroelectronics.
August 2003 - Ed: 5B
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