STTA2512P Datasheet, PDF (1/9 Pages) STMicroelectronics – TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

STTA2512P
®
STTA5012TV1/2
TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
VRRM
t_rr (typ)
VF (max)
25A
1200V
60ns
1.9V
K2
A2
K1
A1
STTA5012TV1
A2 K1
K2 A1
STTA5012TV2
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE : ISOTOP^TM
Electrical insulation : 2500VRMS
Capacitance : < 45pF.
ISOTOP^TM
K
A
K
SOD93
STTA2512P
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
operations.
They are particularly suitable in Motor Control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
I_F(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Value
Repetitive peak reverse voltage
1200
RMS forward current
50
Repetitive peak forward current
tp = 5 µs F = 5kHz square
300
Surge non repetitive forward current tp = 10ms sinusoidal
210
Storage temperature range
- 65 to + 150
Maximum operating junction temperature
150
Unit
V
A
A
A
°C
°C
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
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