STTA2006P_02 Datasheet, PDF (1/8 Pages) STMicroelectronics – TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

®
STTA2006P/PI
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
20A
V_RRM
600V
t_rr (typ)
30ns
V_F (max)
1.5V
K
) _{FEATURES AND BENEFITS}
t(s s SPECIFIC TO “FREEWHEEL MODE” OPERA-
c _{TIONS: FREEWHEEL OR BOOSTER DIODE.}
u _{s ULTRA-FAST AND SOFT RECOVERY.}
rod ^{s VERY LOW OVERALL POWER LOSSES IN}
BOTH THE DIODE AND THE COMPANION
P _TRANSISTOR.
te ^{s HIGH FREQUENCY OPERATIONS.}
le ^{s INSULATED PACKAGE : DOP3I}
o Electrical insulation : 2500VRMS
s _{Capacitance < 12 pF}
A
K
SOD93
STTA2006P
A
K
Isolated
DOP3I
STTA2006PI
Ob _DESCRIPTION
) ^- _{The TURBOSWITCH is a very high performance}
t(s ^{series of ultra-fast high voltage power diodes from}
600V to 1200V.
c _{TURBOSWITCH family, drastically cuts losses in}
du ^{both the diode and the associated switching IGBT}
ro ^{or MOSFET in all “freewheel mode” operations}
and is particularly suitable and efficient in Motor
control freewheel applications and in booster
diode applications in power factor control
circuitries.
Packaged either in SOD93 or in DOP3I, these
P _{ABSOLUTE RATINGS (limiting values)}
te _Symbol
ole V_RRM
bsVRSM
O _IF(RMS)
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Value
Unit
600
V
600
V
50
A
I_FRM Repetitive peak forward current
tp = 5 µs F = 5kHz square
270
A
I_FSM Surge non repetitive forward current tp=10 ms sinusoidal
180
A
T_j
Maximum operating junction temperature
150
°C
T_stg Storage temperature range
-65 to 150 °C
TM : TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 4D
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