STT818B Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

®
STT818B
HIGH GAIN LOW VOLTAGE
PNP POWER TRANSISTOR
Type
STT818B
Marking
818B
s VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
s DC CURRENT GAIN > 100 (hFE)
s 3 A CONTINUOUS COLLECTOR CURRENT
(IC)
s SURFACE-MOUNTING SOT23-6L PACKAGE
IN TAPE & REEL
APPLICATIONS
s POWER MANAGEMENT IN PORTABLE
EQUIPMENTS
s SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS
DESCRIPTION
The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
SOT23-6L
(TSOP6)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at TC = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
July 2002
Value
-30
-30
-5
-3
-6
-0.2
-0.5
1.2
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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