STT7P2UH7 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low on-resistance

STT7P2UH7
P-channel 20 V, 0.0195 Ω typ., 7 A STripFET™ H7
Power MOSFET in a SOT23-6L package
Datasheet - production data
SOT23-6L
Figure 1: Internal schematic diagram
 Very low on-resistance
 Very low capacitance and gate charge
 High avalanche ruggedness
Applications
 Switching applications
Description
This P-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
Table 1: Device summary
Order code Marking Package Packaging
STT7P2UH7 7L2U
SOT23-6L Tape and reel
Features
Order code
VDS
RDS(on) max
ID
STT7P2UH7 20 V 0.0225 Ω @ 4.5 V
7A
For the P-channel Power MOSFET the
actual polarity of the voltages and the
current must be reversed.
October 2014
DocID025142 Rev 3
This is information on a product in full production.
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