STT6N3LLH6 Datasheet, PDF (1/12 Pages) STMicroelectronics – Low gate drive power losses

STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™
Power MOSFET in a SOT23-6L package
Datasheet - production data
4
5
6
3
2
1
SOT23-6L
Features
Order code
STT6N3LLH6
V_DSS R_DS(on) max I_D P_TOT
0.025 Ω
(V_GS= 10 V)
30 V
6 A 1.6 W
0.036 Ω
(V_GS= 4.5 V)
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
Order code
STT6N3LLH6
Table 1. Device summary
Marking
Package
STG1
SOT23-6L
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID023012 Rev 3
1/12
www.st.com