STT4P3LLH6 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STT4P3LLH6
P-Channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™
Power MOSFET in an SOT23-6L package
Datasheet - preliminary data
Features
4
5
6
3
2
1
SOT23-6L
Order code
STT4P3LLH6
V_DS
30 V
R_DS(on) max
I_D
0.056 Ω at 10 V 4 A
• Very low on-resistance R_DS(on)
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
6&S
6
Order code
STT4P3LLH6
Table 1. Device summary
Marking
Package
4K3L
SOT23-6L
Packaging
Tape and reel
Note:
For the P-channel MOSFET the actual polarity of the voltages and the current must be
reversed.
December 2014
DocID024615 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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