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STT3PF30L Datasheet, PDF (1/8 Pages) STMicroelectronics – P-CHANNEL 30V - 0.14 ohm - 3A SOT23-6L STripFET™ II POWER MOSFET
STT3PF30L
P-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STT3PF30L
30 V
<0.165 Ω
3A
s TYPICAL RDS(on) = 0.14 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
s CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
s STA3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
September 2002
.
Value
Unit
30
V
30
V
± 16
V
2.4
A
1.5
A
10
A
1.6
W
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
1/8