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| STT3PF20V Datasheet, PDF (1/8 Pages) STMicroelectronics – P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET | |||
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STT3PF20V
P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L
2.7-DRIVE STripFET⢠II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STT3PF20V
!ÃW
1Ã!ÃWÃ5#$W
1Ã!$ÃWÃ5!&W
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s TYPICAL RDS(on) = 0.14 W (@4.5V)
s TYPICAL RDS(on) = 0.20 W (@2.7V)
s ULTRA LOW THRESHOLD GATE DRIVE
(2.7V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Sizeâ¢"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s CELLULAR
MARKING
s STP2
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kW)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(Â)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
(Â) Pulse width limited by safe operating area.
October 2002
.
Value
Unit
20
V
20
V
± 12
V
2.2
A
1.39
A
8.8
A
1.6
W
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
1/8
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