STT3P2UH7 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low on-resistance

STT3P2UH7
P-channel 20 V, 0.087 Ω typ., 3 A STripFET™ H7
Power MOSFET in a SOT23-6L package
Datasheet - production data
SOT23-6L
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max
ID
STT3P2UH7
20 V
0.1 Ω @ 4.5
3A
 Very low on-resistance
 Very low capacitance and gate charge
 High avalanche ruggedness
Applications
 Switching applications
Description
This P-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
Order code
STT3P2UH7
Table 1: Device summary
Marking
Package
3L2U
SOT23-6L
Packaging
Tape and reel
For the P-channel Power MOSFET, current and voltage polarities are reversed.
September 2016
DocID025027 Rev 3
This is information on a product in full production.
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