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| STT2PF60L Datasheet, PDF (1/6 Pages) STMicroelectronics – P-CHANNEL 60V - 0.20 ohm - 2A SOT23-6L STripFET™ II POWER MOSFET | |||
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STT2PF60L
P-CHANNEL 60V - 0.20 ⦠- 2A SOT23-6L
STripFET⢠II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STT2PF60L
60 V
<0.25 â¦
2A
s TYPICAL RDS(on) = 0.20 â¦
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Sizeâ¢"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
s CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
s STP6
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(â¢)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
(â¢) Pulse width limited by safe operating area.
May 2002
.
Value
Unit
60
V
60
V
± 15
V
2
A
1.3
A
8
A
1.6
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/6
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