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| STT1NF100 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 100V - 0.7ohm - 1A SOT23-6L STripFET™ II POWER MOSFET | |||
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STT1NF100
N-CHANNEL 100V - 0.7⦠- 1A SOT23-6L
STripFET⢠II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STT1NF100
100V
<0.8â¦
1A
s TYPICAL RDS(on) = 0.7â¦
s EXCEPTIONAL dv/dt CAPABILITY
s VERY LOW Qg
SOT23-6L
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronics unique âSingle Feature Sizeâ¢â strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s SYNCHRONOUS RECTIFICATION
MARKING
s STQ0
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
September 2002
Value
100
100
± 20
1
0.6
4
1.6
0.013
20
Unit
V
V
V
A
A
A
W
W/°C
V/ns
â 55 to 150
°C
(1) ISD â¤1A, di/dt â¤350A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/6
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