|
STSJ3NM50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 2.5ohm - 3A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET | |||
|
STSJ3NM50
N-CHANNEL 500V - 2.5⦠- 3A PowerSO-8
Zener-Protected MDmesh⢠POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STSJ3NM50
500 V
<3â¦
3A
s TYPICAL RDS(on) = 2.5 â¦
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh⢠is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Companyâs PowerMESH⢠horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Companyâs proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completitionâs products.
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh⢠family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TA = 25°C (1)
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT
PTOT
Total Dissipation at TC = 25°C
Total Dissipation at TA = 25°C (1)
Derating Factor (1)
dv/dt (3) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
DRAIN CONTACT ALSO ON THE BACKSIDE
Value
500
500
± 30
3
0.63
1.89
12
70
3
0.02
15
â 65 to 150
Unit
V
V
V
A
A
A
A
W
W
W/°C
V/ns
°C
August 2002
1/8
|
▷ |