STSJ2NM60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET

STSJ2NM60
N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8
Zener-Protected MDmesh™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STSJ2NM60
600 V
< 3.2 Ω
2A
s TYPICAL R_DS(on) = 2.8 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_A = 25°C (1)
Drain Current (continuous) at T_C = 100°C
I_DM (2) Drain Current (pulsed)
P_TOT
P_TOT
Total Dissipation at T_C = 25°C
Total Dissipation at T_A = 25°C (1)
Derating Factor (1)
dv/dt (3) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
DRAIN CONTACT ALSO ON THE BACKSIDE
Value
600
600
± 30
2
0.37
1.26
8
70
3
0.02
15
– 65 to 150
Unit
V
V
V
A
A
A
A
W
W
W/°C
V/ns
°C
August 2002
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