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| STSJ25NF3LL Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0085OHM-25A PowerSO-8TM LOW GATE CHARGE STripFET TM II POWER MOSFET | |||
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STSJ25NF3LL
N-CHANNEL 30V - 0.0085 ⦠- 25A PowerSO-8â¢
LOW GATE CHARGE STripFET⢠II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STSJ25NF3LL
30 V <0.0105 ⦠25 A
s TYPICAL RDS(on) = 0.0085 ⦠@ 10V
s TYPICAL Qg = 24 nC @ 4.5 V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. This silicon, housed
in thermally improved SO-8⢠package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower Rthj-c.
PowerSO-8â¢
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C (*)
ID
Drain Current (continuous) at TC = 25°C (#)
ID
Drain Current (continuous) at TC = 100°C
IDM(â¢) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
(â¢) Pulse width limited by safe operating area.
Value
30
30
± 16
25
12
16
100
70
3
(*) Value limited by wires bonding
October 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: 25NF3LL@
Unit
V
V
V
A
A
A
A
W
W
1/8
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