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| STSJ100NH3LL Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0027 ohm - 100A PowerSO-8™ STripFET™ III POWER MOSFET FOR DC-DC CONVERSION | |||
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STSJ100NH3LL
N-CHANNEL 30V - 0.0027 ⦠- 100A PowerSO-8â¢
STripFET⢠III POWER MOSFET FOR DC-DC CONVERSION
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STSJ100NH3LL
30 V <0.0035 ⦠100 A
s TYPICAL RDS(on) = 0.0027 ⦠@ 10V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
The STSJ100NH3LL utilizes the latest advanced
design rules of STâs proprietary STripFETâ¢
technology. This process compled to unique
metallization techniques realizes the most
advanced low voltage MOSFET in SO-8 ever
produced. The exposed slug reduces the Rthj-c
improving the current capability.
PowerSO-8â¢
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 25°C (#)
ID
Drain Current (continuous) at TC = 100°C
IDM(â¢)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
(â¢) Pulse width limited by safe operating area.
Value
Unit
30
V
30
V
± 18
V
100
A
22
A
62.5
A
400
A
70
W
3
W
September 2003
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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