STS9P3LLH6 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low on-resistance

STS9P3LLH6
P-channel -30 V, 12 mΩ typ., -9 A, STripFET™ H6
Power MOSFET in an SO-8 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STS9P3LLH6
VDS
-30 V
RDS(on) max
15 mΩ
ID
-9 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STS9P3LLH6
Table 1: Device summary
Marking
Packages
9K3L
SO-8
Packing
Tape and reel
March 2016
DocID025824 Rev 2
This is information on a product in full production.
1/13
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