STS9P2UH7 Datasheet, PDF (1/15 Pages) STMicroelectronics – Very low capacitance and gate charge

STS9P2UH7
P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7
Power MOSFET in a SO-8 package
Datasheet - production data
5
8
4
1
SO-8
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max
ID
STS9P2UH7 20 V 0.0225 Ω @ 4.5 V
9A
 Very low on-resistance
 Very low capacitance and gate charge
 High avalanche ruggedness
 Ultra logic level
Applications
 Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
Order code
STS9P2UH7
Table 1: Device summary
Marking
Package
9L2U
SO-8
Packaging
Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be
reversed.
January 2015
DocID025143 Rev 3
This is information on a product in full production.
1/15
www.st.com