STS9NH3LL_07 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET

STS9NH3LL
N-channel 30 V - 0.018 Ω - 9 A - SO-8
low gate charge STripFET™ III Power MOSFET
Features
Type
STS9NH3LL
V_DSS
R_DS(on)
max
I_D
30 V
0.022 Ω 9 A
■ Optimal R_DS(on) x Qg trade-off @ 4.5 V
■ Conduction losses reduced
■ Switching losses reduced
Application
■ Switching applications
Description
This application specific Power MOSFET is the
third generation of STMicroelectronics unique
“single feature size” strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS9NH3LL
Marking
S9NH3LL
Package
SO-8
Packaging
Tape & reel
December 2007
Rev 3
1/13
www.st.com
13