STS9NF3LL Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.016 ohm - 9A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET

STS9NF3LL
N-CHANNEL 30V - 0.016 Ω - 9A SO-8
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS9NF3LL
30 V <0.019 Ω
9A
s TYPICAL R_DS(on) = 0.016 Ω
s OPTIMAL R_DS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC_S
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
(•) Pulse width limited by safe operating area.
November 2001
.
Value
30
30
± 16
9
5.6
36
2.5
Unit
V
V
V
A
A
A
W
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