STS9D8NH3LL Datasheet, PDF (1/14 Pages) STMicroelectronics – Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET™ Power MOSFET

STS9D8NH3LL
Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8
low on-resistance STripFET™ Power MOSFET
Features
Type
V_DSS R_DS(on) Qg I_D
STS9D8NH3LL ^{Q1 30V < 0.022Ω 7nC 8A}
Q₂ 30V < 0.015Ω 8nC 9A
■ Optimal R_DS(on) x Qg trade-off @ 4.5V
■ Conduction losses reduced
■ Switching losses reduced
Application
■ Switching applications
Description
This device uses the latest advanced design rules
of ST’s STrip based technology. The Q1 and Q2
transistors, show respectively, the best gate
charge and on-resistance for minimizing the
switching and conduction losses. This application
specific Power MOSFET has been designed to
replace two SO-8 packages in DC-DC converters.
S0-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS9D8NH3LL
Marking
9D8H3LL-
Package
SO-8
Packaging
Tape & reel
December 2007
Rev 3
1/14
www.st.com
14