STS8NFS30L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.018ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

®
STS8NFS30L
STripFET^™
N - CHANNEL 30V - 0.018Ω - 8A S0-8
MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
V _{D SS}
R_{DS(on )}
30 V <0.022 Ω
SCHOTTKY
I_{F (AV)}
V_RRM
3A
30 V
I_D
8A
V _{F(M AX)}
0.51 V
DESCRIPTION:
This product associates the latest low voltage
StripFET^™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-
DC converters for printers, portable equipment,
and cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar ame te r
V_DS Drain-source Voltage (V_GS = 0)
V_DGR
V_GS
ID
I_D
I_{D M}( •)
P_tot
Drain- gat e Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_RRM Repetitive Peak Reverse Voltage
I_F(RMS) RMS Forward Current
I_F(AV) Average Forward Current
I_FSM Surge Non Repetit ive Forward Current
I_RSM Non Repetitive Peak Reverse Current
dv/dt Critical Rate Of Rise Of Reverse Voltage
(•) Pulse width limited by safe operating area
T_L=125 ^oC
δ =0.5
tp= 10 ms
Sinusoidal
tp=100 µs
V alu e
30
30
± 20
8
5
32
2.5
V alu e
30
20
3
75
1
10000
Unit
V
V
V
A
A
A
W
Un it
V
A
A
A
A
V/µs
December 1999
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