STS8N6LF6AG Datasheet, PDF (1/13 Pages) STMicroelectronics – Switching applications

STS8N6LF6AG
Automotive-grade N-channel 60 V, 21 mΩ typ., 8 A
STripFET™ F6 Power MOSFET in an SO-8 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STS8N6LF6AG 60 V
24 mΩ
8 A 3.2 W
 AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Logic level
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STS8N6LF6AG
Table 1: Device summary
Marking
Package
8N6LF6
SO-8
Packing
Tape and reel
January 2017
DocID030126 Rev 1
This is information on a product in full production.
1/13
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