STS8DNH3LL Datasheet, PDF (1/9 Pages) STMicroelectronics – DUAL N-CHANNEL 30V - 0.018 OHM - 8A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET

STS8DNH3LL
DUAL N-CHANNEL 30V - 0.018 Ω - 8A SO-8
LOW GATE CHARGE STripFET™ III POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS8DNH3LL
30 V <0.022 Ω
8A
■ TYPICAL R_DS(on) = 0.018Ω
■ OPTIMAL R_DS(on) x Qg TRADE-OFF @ 4.5V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific MOSFET is the Third generation
of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows the
best trade-off between on-resistance and gate charge.
When used as high and low side in buck regulators, it
gives the best performance in terms of both conduction
and switching losses. This is extremely important for
motherboards where fast switching and high efficiency
are of paramount importance.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC_S
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS8DNH3LL
MARKING
S8DNH3LL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
(•) Pulse width limited by safe operating area.
June 2004
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Value
30
30
± 16
8
5
32
2
Rev.0.2
Unit
V
V
V
A
A
A
W
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