STS8C5H30L_0707 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET™ III MOSFET

STS8C5H30L
N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8
Low gate charge STripFET™ III MOSFET
Features
Type
V_DSS R_DS(on) I_D
STS8C5H30L(N-channel) 30V <0.022 8A
STS8C5H30L(P-channel) 30V <0.056 5A
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold drive
■ Standard outline for easy automated surface
mount assembly
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Application
■ Switching application
S0-8
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Part number
STS8C5H30L
Marking
S8C5H30L
Package
SO-8
Packaging
Tape & reel
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
July 2007
Rev 4
1/14
www.st.com
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