STS7PF30L Datasheet, PDF (1/6 Pages) STMicroelectronics – P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET™ II POWER MOSFET

STS7PF30L
P-CHANNEL 30V - 0.016Ω - 7A SO-8
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STS7PF30L 30 V
< 0.021 Ω
7A
s TYPICAL R_DS(on) = 0.016Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
SO-8
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
(q) Pulse width limited by safe operating area
December 2002
Value
Unit
30
V
30
V
±20
V
7
A
4.4
A
28
A
2.5
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
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