STS7P4LLF6 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STS7P4LLF6
P-channel 40 V, 0.0175 Ω typ.,7 A, STripFET™ F6
Power MOSFET in an SO-8 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STS7P4LLF6
VDS
40 V
RDS(on) max.
ID
0.0205 Ω
7A
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
For the P-channel Power MOSFET, current
polarity of voltages and current have to be
reversed.
Order code
STS7P4LLF6
Table 1: Device summary
Marking
Package
7K4L
SO-8
Packaging
Tape and reel
March 2015
DocID025619 Rev 2
This is information on a product in full production.
1/13
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