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STS7NF60L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET™ II POWER MOSFET
STS7NF60L
N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS7NF60L
60 V < 0.0195 Ω 7.5 A
s TYPICAL RDS(on) = 0.017 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
EAS (1) Single Pulse Avalanche Energy
(•) Pulse width limited by safe operating area.
April 2002
.
Value
60
60
± 16
7.5
4.7
30
2.5
350
(1) Starting Tj = 25 oC, ID = 7.5 A VDD = 30 V
Unit
V
V
V
A
A
A
W
mJ
1/8