STS7C4F30L Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET™ POWER MOSFET

STS7C4F30L
N-CHANNEL 30V - 0.018 Ω - 7A SO-8
P-CHANNEL 30V - 0.070 Ω - 4A SO-8
STripFET™ POWER MOSFET
TYPE
V_DSS R_DS(on)
I_D
STS7C4F30L(N-Channel) 30 V <0.022 Ω 7 A
STS7C4F30L(P-Channel) 30 V <0.080 Ω 4 A
s TYPICAL R_DS(on) (N-Channel) = 0.018 Ω
s TYPICAL R_DS(on) (P-Channel) = 0.070 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC/DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
N-CHANNEL
P-CHANNEL
Unit
V_DS
Drain-source Voltage (V_GS = 0)
30
30
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
30
30
V
V_GS
Gate- source Voltage
± 20
± 20
V
I_D
Drain Current (continuos) at T_C = 25°C
Single Operating
7
4
A
I_D
Drain Current (continuos) at T_C = 100°C
Single Operating
4.4
2.5
A
I_DM(•)
Drain Current (pulsed)
28
16
A
P_tot
Total Dissipation at T_C = 25°C Dual Operating
Total Dissipation at T_C = 25°C Single Operating
1.6
2
W
W
T_stg
Storage Temperature
-60 to 150
°C
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
150
°C
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
June 2001
.
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