STS6P3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STS6P3LLH6
P-channel 30 V, 0.024 Ω typ., 6 A, STripFET™ VI DeepGATE™
Power MOSFET in a SO-8 package
Datasheet - preliminary data
Features
4
1
SO-8
Order code
STS6P3LLH6
V_DS
30 V
R_DS(on) max
I_D
0.03 Ω
6A
• R_DS(on)* Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
Order code
STS6P3LLH6
Table 1. Device summary
Marking
Packages
6K3L
SO-8
Packaging
Tape and reel
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed.
November 2013
DocID024219 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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