STS5P3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – Very low gate charge

STS5P3LLH6
P-channel 30 V, 0.048 Ω typ., 5 A STripFET™ H6 DeepGATE™
Power MOSFET in an SO-8 package
Datasheet - preliminary data
Features




SO-8
Figure 1. Internal schematic diagram

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Order code
STS5P3LLH6
V_DS R_DS(on) max I_D
30 V 0.056 Ω at 10 V 5 A
• Very low on-resistance R_DS(on)
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
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 _6&3
Order code
STS5P3LLH6
Table 1. Device summary
Marking
Package
5K3L
SO-8
Packaging
Tape and reel
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed.
December 2014
DocID024614 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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